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* High DC Current Gain -- hFE = 4000 (Typ) @ IC = 5.0 Adc * Monolithic Construction with Built-in Base-Emitter Shunt Resistors . . . for use as output devices in complementary general purpose amplifier applications.
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
Preferred devices are Motorola recommended choices for future use and best overall value.
Medium-Power Complementary Silicon Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 7 Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Device Dissipation @ TC = 25_C Derate above 25_C Base Current Collector Current Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Characteristic Rating BASE PNP MJ2500 MJ2501
[ 2.0 k [ 50
Figure 1. Darlington Circuit Schematic
Symbol
Symbol
TJ, Tstg
VCEO
VCB
VEB
JC
PD
IC
IB
COLLECTOR
EMITTER
MJ2500 MJ3000
60
60
- 55 to + 200
150 0.857
1.17
Max
0.2
5.0
10
BASE
MJ2501 MJ3001
NPN MJ3000 MJ3001
80
80
Watts W/_C
_C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
[ 2.0 k [ 50
_C
COLLECTOR
EMITTER
MJ2955 (See 2N3055)
10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60 - 80 VOLTS 150 WATTS
*Motorola Preferred Device
MJ3001*
MJ3000
MJ2501*
MJ2500
(See 2N3055A)
MJ2955A
Order this document by MJ2500/D
CASE 1-07 TO-204AA (TO-3)
NPN
PNP
1
20,000 hFE, DC CURRENT GAIN 10,000 5000 2000 1000 500 200 100 50 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 10 - 55C VCE = 3.0 Vdc 25C TJ = 150C
hFE, SMALL-SIGNAL CURRENT GAIN
IC, COLLECTOR CURRENT (AMP)
V, VOLTAGE (VOLTS)
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII III I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
MJ2500 MJ2501 MJ3000 MJ3001
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector Emitter Breakdown Voltage(1) (IC = 100 mAdc, IB = 0) MJ2500, MJ3000 MJ2501, MJ3001 V(BR)CEO ICER 60 80 -- -- Vdc Collector-Emitter Leakage Current (VEB = 60 Vdc, RBE = 1.0 k ohm) (VEB = 80 Vdc, RBE = 1.0 k ohm) (VEB = 60 Vdc, RBE = 1.0 k ohm, TC = 150_C) (VEB = 80 Vdc, RBE = 1.0 k ohm, TC = 150_C) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) mAdc MJ2500, MJ3000 MJ2501, MJ3001 MJ2500, MJ3000 MJ2501, MJ3001 -- -- -- -- -- -- -- 1.0 1.0 5.0 5.0 2.0 1.0 1.0 IEBO mAdc mAdc Collector Emitter Leakage Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (1) ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc) MJ2500, MJ3000 MJ2501, MJ3001 ICEO hFE 1000 -- -- -- -- -- Collector-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 20 mAdc) (IC = 10 Adc, IB = 50 mAdc) VCE(sat) VBE(on) 2.0 4.0 3.0 Vdc Vdc Base Emitter Voltage (IC = 5.0 Adc, VCE = 3.0 Vdc) (1)Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
v
v
50,000
3000 2000 1000 500 300 200 100 50
TC = 25C VCE = 3.0 Vdc IC = 5.0 Adc
30 103
104 105 f, FREQUENCY (Hz)
106
Figure 2. DC Current Gain
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.01 0.02 0.05 0.1 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V VCE(sat) @ IC/IB = 250 0.2 0.5 1.0 2.0 5.0 10 TJ = 25C 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2
Figure 3. Small-Signal Current Gain
SECONDARY BREAKDOWN LIMITED THERMALLY LIMITED @ TC = 25C BONDING WIRE LIMITED
TJ = 200C 0.1 1.0 2.0 3.0 5.0 7.0
MJ2500, MJ3000 MJ2501, MJ3001 10 20 30 50 70 100
IC, COLLECTOR CURRENT (AMP)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. "On" Voltages There are two limitations on the power handling ability of a transistor: junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation 2
Figure 5. DC Safe Operating Area than the curves indicate. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.
Motorola Bipolar Power Transistor Device Data
MJ2500 MJ2501 MJ3000 MJ3001
PACKAGE DIMENSIONS
A N C -T- E D U V
2 2 PL SEATING PLANE
K
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY.
0.13 (0.005) L G
1
TQ
M
Y
M
-Y-
H
B
-Q- 0.13 (0.005)
M
TY
M
DIM A B C D E G H K L N Q U V
INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188
MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77
STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR
CASE 1-07 TO-204AA (TO-3) ISSUE Z
Motorola Bipolar Power Transistor Device Data
3
MJ2500 MJ2501 MJ3000 MJ3001
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4
Motorola Bipolar Power Transistor Device Data
*MJ2500/D*
MJ2500/D

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